UVM Theses and Dissertations
Format:
Print
Author:
Hill, Scott
Dept./Program:
Electrical Engineering
Year:
2009
Degree:
MS
Abstract:
Growth of quantum dot electronic materials is an exciting area of research and offers the potential of yielding new materials and devices that perform better than current bulk semi-conductor materials. Quantum dot growth has become more and more popular with the advance in electronics. Quantum dots are used in a vast amount of devices such as optical switches, LEOS, infrared photodetectors as well photovoltaic cells. GaSb quantum dot materials show great potential to offer new properties that will answer the demand of future devices. GaSb is a member of the III-V family of semi-conductor materials. The band gap of GaSb is direct and when in the quantum dot form has the ability to change its band gap energy by modifying the size of the dots.
This thesis describes the growth of GaSb quantum dots on silicon substrates. In this particular investigation, the main factors considered w.ere time and substrate temperature. Both were found to have a direct effect on the size and density of the dots grown. Also during this investigation, the growth of a Sb thin film as well as an annealing process prior to the deposition was found to improve the quality of the quantum dot growth. Other factors that are found to be critical to the GaSb dot growth is the pre processing of the wafer in 48% HF solution as well as the use of a hydrogen gas flow during the pre deposition, as well as the deposition itself.
This thesis describes the growth of GaSb quantum dots on silicon substrates. In this particular investigation, the main factors considered w.ere time and substrate temperature. Both were found to have a direct effect on the size and density of the dots grown. Also during this investigation, the growth of a Sb thin film as well as an annealing process prior to the deposition was found to improve the quality of the quantum dot growth. Other factors that are found to be critical to the GaSb dot growth is the pre processing of the wafer in 48% HF solution as well as the use of a hydrogen gas flow during the pre deposition, as well as the deposition itself.