Ask a Librarian

Threre are lots of ways to contact a librarian. Choose what works best for you.

HOURS TODAY

Closed

Reference Desk

CONTACT US BY PHONE

(802) 656-2022

Voice

(802) 503-1703

Text

MAKE AN APPOINTMENT OR EMAIL A QUESTION

Schedule an Appointment

Meet with a librarian or subject specialist for in-depth help.

Email a Librarian

Submit a question for reply by e-mail.

WANT TO TALK TO SOMEONE RIGHT AWAY?

Library Hours for Saturday, November 23rd

All of the hours for today can be found below. We look forward to seeing you in the library.
HOURS TODAY
Closed
MAIN LIBRARY

SEE ALL LIBRARY HOURS
WITHIN HOWE LIBRARY

MapsM-Th by appointment, email govdocs@uvm.edu

Media ServicesClosed

Reference DeskClosed

OTHER DEPARTMENTS

Special CollectionsClosed

Dana Health Sciences Library10:00 am - 6:00 pm

 

CATQuest

Search the UVM Libraries' collections

UVM Theses and Dissertations

Browse by Department
Format:
Online
Author:
Cleary, Thomas Charles
Dept./Program:
Physics
Year:
2023
Degree:
M.S.
Abstract:
In this work, a computational approach is used to study Metal-Dielectric Photonic Crystal Organic Light Emitting Diodes (MDPC OLEDs) and the changes that non-uniform dielectric layers bring to the photonic band structure. A simplified MDPC OLED constructed from silver metal layers and light-emitting layers of Alq3 is modeled using the transfer matrix method which allows for the simulation of thousands of devices featuring a wide range of size defects in one or more dielectric layers. Three-cavity devices are simulated with aberrant cavities of sizes from 1% to 200% the standard size. Emission plots and electric field profiles are used to illustrate the effects of the defects in these cavities. The results of these simulations are described by two models, based on the coupled oscillator and perturbed harmonic mode models of MDPC OLEDs. We describe the precise control of defect states that exist in the photonic band gap, and identify the importance of the defect cavity position in determining the band structure of a device with such states. The work is expanded into devices with more cavities, and devices with multiple defects, showing how the same principles of cavity coupling can be applied to predict the behavior of arbitrarily large devices with any number of defects.
Note:
Access to this item embargoed until 08/15/2025.